Impact of MoS2 Layer Thickness and Donor Concentration on Saturation Current in 4-Layer MOSFET: A Comsol Simulation

Abstract

This study investigates the effects of the thickness and donor concentration of a hybrid MoS₂ semiconductor layer on the saturation current of a four-layer MOSFET, utilizing Comsol Multiphysics simulation software. By leveraging the software's capabilities to adjust physical parameters, we systematically analyze the influence of these variables on the device performance. Our findings indicate that increasing the MoS₂ layer thickness and donor concentration significantly enhances the saturation current, thereby improving the overall efficiency of the four-layer MOSFET. These simulation results align closely with experimental data and create a robust foundation for future studies and fabrication efforts aimed at optimizing the performance of MOSFETs through material engineering.